http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SGM2310B 2.7a , 60v , r ds(on) 100 m ? n-channel enhancement mode mosfet elektronische bauelemente 20-feb-2013 rev. a page 1 of 4 top view top view 1 2 3 4 a b d l k f g h j e c rohs compliant product a suffix of -c specifies halogen and lead-free description the SGM2310B utilized advanced processing techniques to achieve the lowest possible on-resist ance, extremely efficient and cost-effectiveness device. the SGM2310B is universally used for all commercial-ind ustrial applications. features simple drive requirement small package outline marking package information absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current 1 , v gs @10v t a =25c i d 2.7 a t a =70c 2.2 pulsed drain current 2 i dm 10 a power dissipation 3 t a =25c p d 1.25 w linear derating factor 0.01 c / w operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 1 r ja 100 c / w package mpq leader size sot-89 3k 7 inch sot-89 1 g 3 s d 24 2310b = date code ref. millimeter ref. millime ter min. max. min. max. a 4.40 4.60 g - - b 4.05 4.25 h 0.89 1.20 c 2.40 2.60 j 0.35 0.41 d 1.40 1.60 k 0.70 0.80 e 3.00 ref. l 1.50 ref. f 0.40 0.52
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SGM2310B 2.7a , 60v , r ds(on) 100 m ? n-channel enhancement mode mosfet elektronische bauelemente 20-feb-2013 rev. a page 2 of 4 electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 60 - - v v gs =0, i d =250 a gate-threshold voltage v gs(th) 1 - 2.5 v v ds =v gs , i d =250 a forward transconductance g fs - 13 - s v ds =5v, i d =2a gate-body leakage current i gss - - 100 na v gs = 20v drain-source leakage current t j =25c i dss - - 1 a v ds =48v, v gs =0 t j =55c - - 5 v ds =48v, v gs =0 drain-source on-resistance 2 r ds(on) - - 100 m v gs =10v, i d =2.5a - - 110 v gs =4.5v, i d =1.5a total gate charge q g - 5 - nc v ds =48v, v gs =4.5v, i d =2a gate-source charge q gs - 1.68 - gate-drain (miller)charge q gd - 1.9 - turn-on delay time 2 t d(on) - 1.6 - ns v dd =30v, v gs =10v, r g =3.3 , i d =2a rise time t r - 7.2 - turn-off delay time t d(off) - 25 - fall time t f - 14.4 - input capacitance ciss - 511 - pf v gs =0, v ds =15v, f=1.0mhz output capacitance coss - 38 - reverse transfer capacitance crss - 25 - source-drain diode diode forward voltage 2 v sd - - 1.2 v i s =1a, v gs =0 continuous source current 1.4 i s - - 2.7 a v g =v d =0, force current pulsed source current 2.4 i sm - - 10 reverse recovery time t rr - 9.7 - ns i s =2a, di/dt=100a/ s v gs =0 reverse recovery charge q rr - 5.8 - nc notes: 1. surface mounted on fr4 board , t Q 10sec. 2. the data tested by pulsed , pulse width Q 300 s, duty cycle Q 2% 3. the power dissipation is limited by 150 c junc tion temperature 4. the data is theoretically the same as i d and i dm , in real applications , should be limited by tota l power dissipation
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SGM2310B 2.7a , 60v , r ds(on) 100 m ? n-channel enhancement mode mosfet elektronische bauelemente 20-feb-2013 rev. a page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SGM2310B 2.7a , 60v , r ds(on) 100 m ? n-channel enhancement mode mosfet elektronische bauelemente 20-feb-2013 rev. a page 4 of 4 characteristic curves
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